Journal
INORGANIC CHEMISTRY FRONTIERS
Volume 8, Issue 11, Pages 2782-2787Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/d1qi00100k
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Funding
- National Research Foundation (NRF) of Korea [2021R1A4A2001658]
- Korean government (MSIT)
- National Research Foundation of Korea [2021R1A4A2001658] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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A facile compositional tuning with Sb and Cu addition generates engineered defects in GeTe alloys, enhancing the power factor and reducing the thermal conductivity, leading to a maximum thermoelectric figure of merit of 1.4 at 723 K.
A facile compositional tuning by Sb and Cu addition is performed to generate engineered defects in GeTe alloys with ultra-low thermal conductivity. Substitution of Sb and Cu at the Ge-site enhances the power factor due to the optimization of carrier concentration while maintaining the convergence of the valence bands. Furthermore, complex multi-dimensional defect structures including 0D (0-dimensional) substituted Sb-Ge and Cu-Ge, 2D twin and inversion boundaries, 3D herringbone structures, 3D embedded nanostructures, and 3D Cu-rich coherent precipitates are generated, which significantly reduce the lattice thermal conductivity benefitting from a collective phonon scattering. Due to this simultaneous manipulation of electronic and thermal transport properties, a maximum thermoelectric figure of merit (zT) of 1.4 was obtained at 723 K.
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