Gate-defined quantum point contact in an InSb two-dimensional electron gas

We investigate an electrostatically defined quantum point contact (QPC) in a high-mobility InSb two-dimensional electron gas. Well-defined conductance plateaus are observed, and the subband structure of the QPC is extracted from finite-bias measurements. The Zeeman splitting is measured in both in-plane and out-of-plane magnetic fields. We find an in-plane g factor vertical bar g(parallel to)*vertical bar approximate to 40. The out-of-plane g factor is measured to be vertical bar g(perpendicular to)*vertical bar approximate to 50, which is close to the g factor in the bulk.

Automated summary

In this study, we investigated an electrostatically defined quantum point contact (QPC) in a high-mobility InSb two-dimensional electron gas. Well-defined conductance plateaus were observed, and the subband structure of the QPC was extracted from finite-bias measurements. Zeeman splitting was measured in both in-plane and out-of-plane magnetic fields, revealing g factor values close to those in the bulk material.