4.7 Article

Characterization and Architecture of Monolithic N+P-CMOS-SiPM Array for ToF Measurements

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Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TIM.2020.3045204

Keywords

Architecture; CMOS; dark count rate (DCR); light detection and ranging (LIDAR) system; read-out circuitry; silicon photomultiplier (SiPM); single photon avalanche diode (SPAD)

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The article discusses a new mixed design approach for monolithic CMOS-SiPM, focusing on sampling, filtering, and converting signals, as well as demonstrating the system's design, simulation, and measurement results. The system achieves high clock rate and resolution at low cost, with potential applications in various fields.
This article focuses on the characterization and architecture of a new mixed design approach to monolithic CMOS-silicon-photomultiplier (SiPM), where the mixed-signal circuitry as well as the logical concepts are implemented at the die level. The new architecture contains two key areas: 1) a method for sampling, filtering, and converting the electrical signal generated by the SiPM to the digital domain by taking advantage of the nature of the SiPM as an optical-to-digital converter and 2) a fully digital configurable method, which requires just one clock generator, enabling sampling at an adjustable time window (gating method) and reduces background noise. We report the design, simulation, and measurement results. The system was fabricated at a low-cost 0.18 [mu m]0.18-mu m CMOS process yet achieves a clock rate of 1 GHz, high timing and photon counting resolution, and low jitter. The reported demonstrator may be applied to 3-D range measurements, light detection and ranging (LIDAR), time-of-flight (ToF) system, and gaming systems.

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