4.6 Article

Steep sulfur gradient in CZTSSe solar cells by H2S-assisted rapid surface sulfurization

Journal

RSC ADVANCES
Volume 11, Issue 21, Pages 12687-12695

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/d1ra00494h

Keywords

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Funding

  1. German Federal Ministry of Education and Research (BMBF) [03SF0530A, 03SF0530B]
  2. Deutsche Forschungsgemeinschaft (DFG) [GZ:INST 121384/64-1 FUGG]
  3. DOE Office of Science User Facility [DE-AC02-05CH11231]

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This study presents a novel approach to introduce a [S]/([S] + [Se]) grading for Cu2ZnSn(S,Se)(4) solar cells by creating a fast sulfurization reaction on the surface of pure selenide kesterite absorbers using highly reactive H2S gas and high sulfurization temperatures in a rapid flash-type process. Various analysis techniques were used to gain depth-varied information on the [S]/([S] + [Se]) ratio and discuss the impact of different process parameter variations on the material and device properties. The results demonstrate the potential of the developed process to generate a steep gradient of sulfur mainly confined to the surface region of the absorber film.
Sulfur/selenium grading is a widely used optimization strategy in kesterite thin-film solar cells to obtain a bandgap-graded absorber material and to optimize optical and electrical properties of the solar-cell device. In this work, we present a novel approach to introduce a [S]/([S] + [Se]) grading for Cu2ZnSn(S,Se)(4) solar cells. In contrast to commonly used methods with slow process dynamics, the presented approach aims to create a fast sulfurization reaction on the surface of pure selenide kesterite absorbers by using highly reactive H2S gas and high sulfurization temperatures in a rapid flash-type process. With a combination of X-ray photoelectron spectroscopy, X-ray emission spectroscopy, Raman spectroscopy, and Raman-shallow angle cross sections spectroscopy, we gain depth-varied information on the [S]/([S] + [Se]) ratio and discuss the impact of different process parameter variations on the material and device properties. The results demonstrate the potential of the developed process to generate a steep gradient of sulfur that is confined mainly to the surface region of the absorber film.

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