4.8 Article

A general strategy for semiconductor quantum dot production

Journal

NANOSCALE
Volume 13, Issue 17, Pages 8004-8011

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/d0nr09067k

Keywords

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Funding

  1. Strategic Priority Research Program of the Chinese Academy of Sciences [XDB36000000]
  2. National Key R&D Program of China [2018YFA0703700]
  3. National Natural Science Foundation of China [61575049, 51601046, 51802054, 21673054, 11874130]
  4. Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics [KF201902]
  5. 100-Talent Program of Chinese Academy of Sciences
  6. National Center for Nanoscience and Technology

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A general strategy has been developed to mechanically tailor semiconductor bulk materials into quantum dots, resulting in high yields of various semiconductor QDs. The produced QDs exhibit outstanding water solubility and remarkable photoluminescence, showing potential for practical applications in solid-state fluorescence and nonlinear saturation absorption.
Mass production of semiconductor quantum dots (QDs) from bulk materials is highly desired but far from being satisfactory. Herein, we report a general strategy to mechanically tailor semiconductor bulk materials into QDs. Semiconductor bulk materials are routinely available via simple chemical precipitation. From their bulk materials, a variety of semiconductor (e.g., lead sulfide (PbS), cadmium sulfide (CdS), copper sulfide (CuS), ferrous sulfide (FeS), and zinc sulfide (ZnS)) QDs are successfully produced in high yields (>15 wt%). This is achieved by a combination of silica-assisted ball-milling and sonication-assisted solvent treatment. The as-produced QDs show intrinsic characteristics and outstanding water solubility (up to 5 mg mL(-1)), facilitating their practical applications. The QD dispersions present remarkable photoluminescence (PL) with exciton-dependence and nanosecond (ns)-scale lifetimes. The QDs-poly(methyl methacrylate) (PMMA) hybrid thin films demonstrate exciting solid-state fluorescence and exceptional nonlinear saturation absorption (NSA). Absolute modulation depths of up to 58% and saturation intensities down to 0.40 MW cm(-2) were obtained. Our strategy could be applied to any semiconductor bulk materials and therefore paves the way for the construction of the complete library of semiconductor QDs.

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