Journal
ADVANCED PHOTONICS RESEARCH
Volume 2, Issue 5, Pages -Publisher
WILEY
DOI: 10.1002/adpr.202000183
Keywords
heterostructures; PbI2; photoluminescences; photostability; ZnO
Categories
Funding
- Program of National Natural Science Foundation of China [51732003, 51872043, 61604037, 11874104, 12074060, 12004069]
- National Science Fund for Distinguished Young Scholars [52025022]
- 111 Project [B13013]
- National Key Research and Development Program of China [2019YFB2205100]
- Ministry of Education [6141A02033414]
- China Postdoctoral Science Foundation [2020M681025]
- Fundamental Research Funds for the Central Universities [2412020QD015, 2412019BJ006, 2412019FZ034]
- Fund from Jilin Province [111865005, YDZJ202101ZYTS049, YDZJ202101ZYTS041, YDZJ202101ZYTS133, 20190103007JH]
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Proposing a novel strategy of constructing a type-I heterostructure with high thermal conductivity ZnO improves the photostability of PbI2 at different excitation wavelengths, leading to nearly eightfold enhancement in photoluminescence under 320nm laser excitation. The type-I band alignment between PbI2 and ZnO enables efficient transfer of photogenerated carriers, enhancing the photostability and photoluminescence of PbI2.
Improving the stability of lead iodide (PbI2), especially photostability, is in crucial demand for the realization of application-level optoelectronic devices. In this regard, deposition of organic polymers on PbI2 as a protective layer is a common strategy to improve its stability, but polymers with low thermal conductivity generally cannot produce the desired effect. Herein, a novel strategy is proposed for improving the photostability of PbI2 at different excitation wavelengths, including 320, 405, and 532nm, via constructing type-I heterostructure with ZnO with high thermal conductivity. In addition, due to the type-I band alignment between PbI2 and ZnO, the photogenerated carriers in ZnO can be transferred to PbI2, resulting in a nearly eightfold photoluminescence enhancement of PbI2 under 320nm laser excitation. The ZnO as a protective layer forming type-I heterostructure is evidenced as a feasible strategy for enhancing the photostability and photoluminescence of PbI2, facilitating the development of practical applications.
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