4.6 Article

Is a transition metal-silicon quadruple bond viable?

Journal

PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 23, Issue 16, Pages 9660-9662

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/d1cp00598g

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Funding

  1. Science and Engineering Research Board, (SERB), Department of Science and Technology (DST), India [ECR/2016/001466]

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This study reports the unprecedented quadruple bonding between a silicon atom and a transition metal fragment in the (1)A(1) electronic ground state of C-3v symmetric SiRu(CO)(3), involving one usual Si-Ru sigma bond, two usual Si-Ru pi bonds, and one additional Si -> Ru dative sigma bond. Bonding analyses reveal the nature of the Si(sic)Ru quadruple bonding interaction.
Quadruple bonding in heavier main group elements is not known albeit having four valence orbitals accessible for bonding. Here we report the unprecedented quadruple bonding between a silicon atom and a transition metal fragment in the (1)A(1) electronic ground state of C-3v symmetric SiRu(CO)(3) based on high level theoretical calculations. Various bonding analyses reveal the nature of the Si(sic)Ru quadruple bonding interaction, which involves one usual Si-Ru sigma bond, two usual Si-Ru pi bonds and one additional Si -> Ru dative sigma bond.

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