Journal
FARADAY DISCUSSIONS
Volume 227, Issue -, Pages 163-170Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/d0fd00007h
Keywords
-
Categories
Funding
- National Science Centre, Poland [2017/24/C/ST3/00119, 2017/27/B/ST3/00205]
- EPSRC ARCHER RAP grant [e547]
- EU Graphene Flagship
- EU Quantum Technology Flagships
- Scientific and Technological Research Council of Turkey (TUBITAK) through BIDEB-2219 programme [2018-1]
- EPSRC CDT Graphene-NOWNANO
- EPSRC CDT Graphene Technology
- EPSRC Doctoral Prize Fellowship
- Royal Society Research Fellowship
- Samsung Advanced Institute of Technology (SAIT)
- ERC Grant Hetero2D
- EPSRC [EP/K01711X/1, EP/K017144/1, EP/N010345/1, EP/L016057/1]
- EPSRC [EP/N010345/1, EP/K01711X/1, EP/K017144/1] Funding Source: UKRI
Ask authors/readers for more resources
In this study, the N-dependence of intralayer vibrations and interlayer modes in layers of InSe and GaSe encapsulated in hexagonal boron nitride was investigated using Raman spectroscopy. The peak positions evolution as a function of N can be described by a linear chain model, which is consistent with first principles calculations.
III-VI post-transition metal chalcogenides (InSe and GaSe) are a new class of layered semiconductors, which feature a strong variation of size and type of their band gaps as a function of number of layers (N). Here, we investigate exfoliated layers of InSe and GaSe ranging from bulk crystals down to monolayer, encapsulated in hexagonal boron nitride, using Raman spectroscopy. We present the N-dependence of both intralayer vibrations within each atomic layer, as well as of the interlayer shear and layer breathing modes. A linear chain model can be used to describe the evolution of the peak positions as a function of N, consistent with first principles calculations.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available