Journal
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Volume 9, Issue -, Pages 424-428Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JEDS.2021.3073220
Keywords
Defect; internal photoemission; metal-insulator-metal (MIM); zirconium oxide
Categories
Funding
- Creative Materials Discovery Program on Creative Multilevel Research Center [2015M3D1A1068062, 2017M3D1A1040828]
- Nano Materials Technology Development Program [2016M3A7B4909942]
- Global Frontier Program through the Global Frontier Hybrid Interface Materials (GFHIM) through the National Research Foundation (NRF) of Korea - Ministry of Science and ICT, South Korea [2013M3A6B1078873]
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Barrier height, trap state, bandgap, and band alignment information of the metal-ZrO2-metal capacitor were extracted using internal photoemission (IPE) system. By correlating the IPE analysis with I-V and C-V characteristics before and after rapid thermal annealing, the origin and transformation of defect states were successfully investigated. The analysis revealed that deep-level defects originating from oxygen vacancies near the top electrode are the cause of leakage current in MIM capacitor, which can be effectively reduced by proper thermal annealing.
Barrier height (phi(b)), trap state, bandgap (E-g), and band alignment information of the metal-ZrO2-metal capacitor have been extracted using internal photoemission (IPE) system. By correlating the IPE analysis with I-V and C-V characteristics obtained before and after rapid thermal annealing, origin and transformation of defect states have been successfully investigated. Our analysis revealed that deep-level defects originating from oxygen vacancies near the top electrode are causing of leakage current in MIM capacitor and these defects can be effectively reduced by a proper thermal annealing.
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