Journal
MATERIALS LETTERS
Volume 298, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.matlet.2021.130011
Keywords
Transparent RRAM; ALD Pt-nanoparticles; Multilevel conductance properties; STDP
Funding
- Dongguk University
- ministry of education and the deanship of scientific research - Najran University Kingdom of Saudi Arabia [NU/ESCI/17/071]
Ask authors/readers for more resources
A RRAM device was fabricated using Pt-NPs deposited by atomic layer deposition, showing controlled filament formation and multilevel conductance, achieving excellent resistive switching properties. Potentiation/depression characteristics were successfully demonstrated by applying increasing voltage pulses, indicating the device's learning potential.
ITO/HfAlO/Pt-NP/HfAlO/ITO RRAM device was fabricated with atomic layer deposited Pt-NPs. Controlled filament formation and multilevel conductance was observed due to enhancing local electric field near Pt-NPs. Resistive switching properties with ON/OFF ratio of > 10 and good endurance upto 500 cycles were achieved. Potentiation/depression characteristics were successfully demonstrated by applying increasing positive/negative voltage pulses. Gradual change in conductance was implemented for demonstration of spike-timing-dependent plasticity (STDP) learning which shows that the proposed RRAM device can be the possible candidate for electronic synaptic devices. (c) 2021 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
