OPTIMIZED DESIGN OF STRAIN-COMPENSATED InXGa1-XN/GaN AND InXGa1-XN/InYGa1-YN MULTIPLE-QUANTUM-WELL LASER DIODES

We carried out a study of the strain-compensated InxGa1-xN/GaN and InxGa1-xN/InyGa1-yN multiple quantum wells, In order to carry out this analysis, we choose a set of three different types of samples. The optimization of this laser structure allowed us to determine the optimal values of the functional parameters, in order to adjust their performance and interest. We also studied the electronic and structural properties of compound semiconductor alloys used in wurtzite phase and we have presented a comparative theoretical study of both structures. Our studies show the improvement of the spontaneous emission spectra and better carrier confinement from the use of InxGa1-xN/InyGa1-yN MQW with higher In-content in barrier as active regions for diode lasers and this structure is useful for the design of new high performance Laser diodes emitting in the Blue/Violet range, and it's also shows that the process of the electron-holes transition is strongly affected by the quantum well width and the Indium composition, and the InGaN lattice mismatch that increases with In-content causing the strain accumulation inside the QW structure. However, strain is undesirable as it can cause defects such as cracking at the interface. We can optimize the InGaN/GaN strained quantum well structures to achieve a reliable optoelectronic component. It suffices to incorporate small amounts of indium in the barrier enhances the annihilation of the defect and strain, thereby improving their structural properties.

Automated summary

The study shows that using high In-content InxGa1-xN/InyGa1-yN multiple quantum wells as active regions can improve the performance of laser diodes, and it is important to optimize the structural parameters to enhance their properties. However, an increase in In-content can lead to strain accumulation, which can be detrimental to structural stability, so optimizing the structure is crucial for achieving reliable optoelectronic components.