Second harmonic generation of MoSi2N4-type layers

The recently discovered two-dimensional (2D) layered semiconductor MoSi2N4 has aroused great interest due to its unique 2D material characteristics. In this study, we found that differences in the structural details for MoSi2N4 may lead to differences in the intensity of second harmonic generation (SHG) and its response to strain. Accordingly, SHG can be used as a simple technique to identify the structural details of this system. We further calculated the SHG effects of MoSi2N4 derivatives and investigated their strain-regulation mechanism, especially including the anomalous SHG responses under strain for MoSi2P4 and MoGe2P4, differing from other known 2D materials. The studies may have forward-looking significance for the research of nonlinear optics and optoelectronics in this novel 2D material system.

Automated summary

The study found that differences in structural details of MoSi2N4 may lead to differences in second harmonic generation intensity and response to strain. Second harmonic generation can be used as a simple technique to identify the structural details of this system. Additionally, the study investigated the strain-regulation mechanism of MoSi2N4 derivatives, including anomalous SHG responses under strain for certain derivatives, which differ from other known 2D materials. These findings hold significance for nonlinear optics and optoelectronics research in this novel 2D material system.