4.6 Article

Large unsaturated transverse and negative longitudinal magnetoresistance in the compensated semimetal MoGe2

Journal

PHYSICAL REVIEW B
Volume 103, Issue 13, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.103.134116

Keywords

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Funding

  1. National Key Research and Development Program of China [2016YFA0300604]
  2. National Natural Science Foundation of China [11874417]
  3. Strategic Priority Research Program (B) of Chinese Academy of Sciences [XDB33010100]

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Our experimental results on MoGe2 show metallic behavior with special resistivity effects under magnetic fields, indicating that the material is a topological semimetal rather than a topological insulator.
We report the experimental results of magnetotransport on the single crystal MoGe2, which was theoretically predicated to be a topological insulator. The resistivity of MoGe2 exhibits a metallic behavior at zero field, while with magnetic fields applied along the z axis and perpendicular to current, MoGe2 presents an upturn resistivity behavior and unsaturated quadratic large magnetoresistance (MR). The analysis of Hall effect shows that MoGe2 is a compensated semimetal with high mobilities at low temperatures, which is the origin of resistivity upturn and unsaturated large MR. As magnetic fields parallel to current, MoGe2 shows a weak antilocalization effect at low fields and a pronounced negative MR at higher fields, which is analogous to the picture of the Adler-Bell-Jackiw axial anomaly. Our results indicate that MoGe2 is a topological semimetal rather than a topological insulator, and will encourage further theoretical and experimental investigations on this compound.

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