Facile one-pot synthesis of defect-engineered step-scheme WO3/g-C3N4 heterojunctions for efficient photocatalytic hydrogen production

Constructing step-scheme (S-scheme) heterojunctions is one of the efficient strategies to enhance photocatalytic processes, but unfortunately their synthesis requires complex procedures. Here, we develop a facile methodology for one-pot synthesis of defect-engineered S-scheme WO3/g-C3N4 heterojunctions. The as-synthesized sample (15.0WCN) exhibits a remarkable photocatalytic hydrogen generation rate (1034 mu mol h(-1) g(-1)), which is 1.7 and 4.5 times higher than that of normal S-scheme WO3/g-C3N4 heterojunctions (15.0W + CN) and pure g-C3N4, respectively. We discover that surface oxygen vacancies can improve the separation efficiency of photogenerated carriers by acting as a mediator between the valence band of g-C3N4 and the conduction band of WO3, while bulk oxygen vacancies mainly enhance visible light absorption through narrowing the band gap in the S-scheme system. In addition, our studies show that surface oxygen vacancies are more effective than bulk ones in S-scheme heterojunctions for photocatalytic hydrogen production. This work affords a new insight into coupling strategies of defect-engineering and S-scheme heterojunctions, which is helpful for designing other efficient photocatalytic systems.

Automated summary

Constructing step-scheme (S-scheme) heterojunctions is an efficient strategy to enhance photocatalytic processes, and a facile methodology for one-pot synthesis of defect-engineered S-scheme WO3/g-C3N4 heterojunctions has been developed. The as-synthesized sample shows remarkable photocatalytic hydrogen generation rate, with surface oxygen vacancies playing a crucial role in improving the separation efficiency of photogenerated carriers.