Journal
RSC ADVANCES
Volume 11, Issue 28, Pages 16962-16969Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/d1ra02523f
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Funding
- Natural Science and Engineering Research Council of Canada (NSERC)
- Canada Research Chairs program (CRC)
- Canada Foundation for Innovation
- Taibah University, Kingdom of Saudi Arabia
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The study focuses on the preparation of a vertical WSe2/hBN heterostructure, showing that with the assistance of hBN underlayer, high-quality and large-area WSe2 growth can be achieved, and the photoluminescence properties exhibit high crystallinity and defect-free characteristics.
The expansion of two-dimensional (2D) van der Waals heterostructure materials growth and synthesis leads to impressive results in the development and improvement of electronic and optoelectronic applications. Herein, a vertical WSe2/hBN heterostructure was obtained via a dual CVD system, in which prior to the WSe2 growth a continuous monolayer hBN was obtained on a SiO2/Si substrate. Comparing growth on SiO2/Si and quartz substrates, we found that the underlayer of hBN leads to a desorption/diffusion process of tungsten (W) and selenium (Se) producing high-quality and large-area WSe2 growth. In contrast with WSe2/SiO2 and WSe2/quartz heterostructures, the photoluminescence properties of WSe2/hBN exhibit a sharp intense WSe2 peak at 790 nm with a narrow full width at half-maximum (80 meV) due to no dangling bonds and dielectric effect of the hBN interface. The photoluminescence results suggest that the WSe2/hBN heterostructure has high crystallinity with a defect-free interface.
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