Journal
PHYSICAL REVIEW B
Volume 103, Issue 17, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.103.174418
Keywords
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Funding
- National Key Research and Development Program of China [2016YFA0300404, 2017YFA0402900]
- NSFC [11474288, 12004024]
- Collaborative Innovation Program of Hefei Science Center of CAS [2019HSC-CIP007]
- Universities Joint Key Laboratory of Photoelectric Detection Science and Technology in Anhui Province [40250520015]
- China Postdoctoral Science Foundation [2020M682055]
- High Magnetic Field Laboratory of Anhui Province
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ZrTe2 exhibits a logT dependence of resistivity, with the existence of a weak Kondo effect in this material. The former two mechanisms, including electron-electron interaction and weak localization, were excluded by measuring transport properties along different directions. By subtracting different quadratic background signals caused by Lorentz force, isotropic negative magnetoresistance was extracted.
Zr-Te compounds are an ideal platform to investigate novel electrical transport properties. Here we report the Kondo effect in single-crystalline ZrTe2. When T < 8 K, ZrTe2 exhibits a logT dependence of resistivity, which may derive from three different mechanisms, including electron-electron interaction, weak localization, and Kondo effect. By measuring transport properties with magnetic field along different directions, the former two mechanisms were excluded. Isotropic negative magnetoresistance was extracted by subtracting different quadratic background signals caused by Lorentz force, which reveals the existence of a weak Kondo effect in this material.
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