Journal
PHYSICAL REVIEW B
Volume 103, Issue 20, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.103.205140
Keywords
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Funding
- Teijin DuPont Films Japan Limited
- MEXT
- JSPS (JP) KAKENHI [JP16H06346, JP19K03730, JP19H00891]
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The study investigates the SdH oscillations in alpha-(BETS)2I-3 molecular conductor at 1.7K, showing that it is in the Dirac fermion phase under pressure. While the material is near the phase transition between strongly correlated insulating and Dirac fermion phases, it is a possible candidate for an ambient-pressure molecular Dirac fermion system. The Berry phase is zero at ambient pressure, but a π Berry phase emerges under pressure, indicating a suppressed metal-insulator crossover at around 0.5 GPa. This contrasts with the behavior of the pioneering molecular Dirac fermion system alpha-(BEDT-TTF)2I-3.
We report on the Shubnikov-de Haas (SdH) oscillations in the quasi-two-dimensional molecular conductor alpha-(BETS)(2)I-3 [BETS: bis(ethylenedithio)tetraselenafulvalene] laminated on polyimide films at 1.7 K. From the SdH phase factor we verified experimentally that the material is in the Dirac fermion phase under pressure. alpha-(BETS)(2)I-3 is in the vicinity of the phase transition between strongly correlated insulating and Dirac fermion phases, and is a possible candidate for an ambient-pressure molecular Dirac fermion system. However, the SdH oscillations indicate that the Berry phase is zero at ambient pressure. Under pressure, a pi Berry phase emerges when the metal-insulator crossover is almost suppressed at similar to 0.5 GPa. The results contrast with those for the pioneering molecular Dirac fermion system alpha-(BEDT-TTF)(2)I-3 [BEDT-TTF: bis(ethylenedithio)tetrathiafulvalene] in which Dirac fermions and semiconducting behavior are simultaneously observed.
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