Journal
RSC ADVANCES
Volume 11, Issue 29, Pages 17910-17913Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/d1ra02155a
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Funding
- Research Foundation of Education Bureau of Hunan Province [20B345, 18A009]
- Doctoral Science Foundation ofHunan Normal University [0531120]
- National Science Foundation of China [12074116, 51102091, 11574081]
- Natural Science Foundation of Hunan Province [2020RC1003, 2020JJ4424]
- Open Foundation of Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, Guangxi University [2021GXYSOF07]
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A flexible electric-double-layer thin film transistor (TFT) based on a vertical InGaZnO4 channel was fabricated at room temperature, exhibiting low operation voltage, high current on/off ratio, and good subthreshold swing. The new transistor shows great potential for low-power portable flexible electronics applications.
Flexible electric-double-layer (EDL) thin film transistors (TFTs) based on a vertical InGaZnO4 (IGZO) channel are fabricated at room temperature. Such TFTs show a low operation voltage of 1.0 V due to the large specific gate capacitance of 3.8 mu F cm(-2) related to electric-double-layer formation. The threshold voltage, drain current on/off ratio and subthreshold swing are estimated to be -0.1 V, 1.2 x 10(6) and 80 mV per decade, respectively. The combination of low voltage, high current on-to-off ratio and room temperature processing make the flexible vertical-IGZO-channel TFTs very promising for low-power portable flexible electronics applications.
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