Related references
Note: Only part of the references are listed.Effect of Ag Concentration Dispersed in HfOx Thin Films on Threshold Switching
Won Hee Jeong et al.
NANOSCALE RESEARCH LETTERS (2020)
Resistive switching materials for information processing
Zhongrui Wang et al.
NATURE REVIEWS MATERIALS (2020)
Understanding of the Abrupt Resistive Transition in Different Types of Threshold Switching Devices From Materials Perspective
Sangmin Lee et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)
Controlled Memory and Threshold Switching Behaviors in a Heterogeneous Memristor for Neuromorphic Computing
Hao-Yang Li et al.
ADVANCED ELECTRONIC MATERIALS (2020)
Design of a Controllable Redox-Diffusive Threshold Switching Memristor
Yiming Sun et al.
ADVANCED ELECTRONIC MATERIALS (2020)
A HfO2/SiTe Based Dual-Layer Selector Device with Minor Threshold Voltage Variation
Bing Song et al.
NANOMATERIALS (2019)
Various Threshold Switching Devices for Integrate and Fire Neuron Applications
Donguk Lee et al.
ADVANCED ELECTRONIC MATERIALS (2019)
Intrinsic limits of leakage current in self-heating-triggered threshold switches
Ziwen Wang et al.
APPLIED PHYSICS LETTERS (2019)
Realization of Spatially Addressable Library by a Novel Combinatorial Approach on Atomic Layer Deposition: A Case Study of Zinc Oxide
Harrison Sejoon Kim et al.
ACS COMBINATORIAL SCIENCE (2019)
3D Stackable and Scalable Binary Ovonic Threshold Switch Devices with Excellent Thermal Stability and Low Leakage Current for High-Density Cross-Point Memory Applications
Jongmyung Yoo et al.
ADVANCED ELECTRONIC MATERIALS (2019)
A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X-Point Memory Applications
Qilin Hua et al.
ADVANCED SCIENCE (2019)
Understanding memristive switching via in situ characterization and device modeling
Wen Sun et al.
NATURE COMMUNICATIONS (2019)
Nanoscale 3D Stackable Ag-Doped HfOx-Based Selector Devices Fabricated through Low-Temperature Hydrogen Annealing
Ju Hyun Park et al.
ACS APPLIED MATERIALS & INTERFACES (2019)
Performance Enhancement of Ag/HfO2 Metal Ion Threshold Switch Cross-Point Selectors
Benjamin Grisafe et al.
IEEE ELECTRON DEVICE LETTERS (2019)
Towards spike-based machine intelligence with neuromorphic computing
Kaushik Roy et al.
NATURE (2019)
Super Nonlinear Electrodeposition Diffusion-Controlled Thin-Film Selector
Xinglong Ji et al.
ACS APPLIED MATERIALS & INTERFACES (2018)
Non-volatile resistive switching in CuBi-based conductive bridge random access memory device
Sujaya Kumar Vishwanath et al.
APPLIED PHYSICS LETTERS (2018)
Effect of dysprosium and lutetium metal buffer layers on the resistive switching characteristics of Cu-Sn alloy-based conductive-bridge random access memory
Sujaya Kumar Vishwanath et al.
NANOTECHNOLOGY (2018)
Neuro-Inspired Computing With Emerging Nonvolatile Memory
Shimeng Yu
PROCEEDINGS OF THE IEEE (2018)
Solution-Processed Flexible Threshold Switch Devices
Youngjun Park et al.
ADVANCED ELECTRONIC MATERIALS (2018)
Ag:SiOxNy-Based Bilayer ReRAM Structure with Self-Limiting Bidirectional Threshold Switching Characteristics for Cross-Point Array Application
Tae Ho Lee et al.
ACS APPLIED MATERIALS & INTERFACES (2018)
Electroplating of Semiconductor Materials for Applications in Large Area Electronics: A Review
Ayotunde Adigun Ojo et al.
COATINGS (2018)
Perspective: A review on memristive hardware for neuromorphic computation
Changhyuck Sung et al.
JOURNAL OF APPLIED PHYSICS (2018)
The era of hyper-scaling in electronics
Sayeef Salahuddin et al.
NATURE ELECTRONICS (2018)
Threshold Switching of Ag or Cu in Dielectrics: Materials, Mechanism, and Applications
Zhongrui Wang et al.
ADVANCED FUNCTIONAL MATERIALS (2018)
Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing
Zhongrui Wang et al.
NATURE MATERIALS (2017)
Effects of Liner Thickness on the Reliability of AgTe/TiO2-Based Threshold Switching Devices
Jeonghwan Song et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2017)
Memory selector devices and crossbar array design: a modeling-based assessment
An Chen
JOURNAL OF COMPUTATIONAL ELECTRONICS (2017)
Reliable current changes with selectivity ratio above 109 observed in lightly doped zinc oxide films
Un-Bin Han et al.
NPG ASIA MATERIALS (2017)
Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high Ion/Ioff ratio for selector application
Jaehyuk Park et al.
SCIENTIFIC REPORTS (2017)
Field-induced nucleation in threshold switching characteristics of electrochemical metallization devices
Jongmyung Yoo et al.
APPLIED PHYSICS LETTERS (2017)
Nanometer-Scale Phase Transformation Determines Threshold and Memory Switching Mechanism
Byeong-Gyu Chae et al.
ADVANCED MATERIALS (2017)
Anatomy of Ag/Hafnia-Based Selectors with 1010 Nonlinearity
Rivu Midya et al.
ADVANCED MATERIALS (2017)
Threshold Selector With High Selectivity and Steep Slope for Cross-Point Memory Array
Jeonghwan Song et al.
IEEE ELECTRON DEVICE LETTERS (2015)
One-Selector One-Resistor Cross-Point Array With Threshold Switching Selector
Leqi Zhang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
Cross-Point Resistive RAM Based on Field-Assisted Superlinear Threshold Selector
Sung Hyun Jo et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View
Jun Yeong Seok et al.
ADVANCED FUNCTIONAL MATERIALS (2014)
Access devices for 3D crosspoint memory
Geoffrey W. Burr et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2014)
Memristive devices for computing
J. Joshua Yang et al.
NATURE NANOTECHNOLOGY (2013)
Mechanism of Ag Doping in ZnO Nanowires by Electrodeposition: Experimental and Theoretical Insights
M. A. Thomas et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2012)
Excellent Selector Characteristics of Nanoscale VO2 for High-Density Bipolar ReRAM Applications
Myungwoo Son et al.
IEEE ELECTRON DEVICE LETTERS (2011)
Structural, Electronic, and Optical Properties of Ag-Doped ZnO Nanowires: First Principles Study
Yanlu Li et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2011)
Electrochemical metallization memories-fundamentals, applications, prospects (vol 22, 254003, 2011)
Ilia Valov et al.
NANOTECHNOLOGY (2011)
Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode
Qi Liu et al.
ACS NANO (2010)
Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
Rainer Waser et al.
ADVANCED MATERIALS (2009)
Demonstration of Tunneling FETs Based on Highly Scalable Vertical Silicon Nanowires
Z. X. Chen et al.
IEEE ELECTRON DEVICE LETTERS (2009)
Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory
Ugo Russo et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2009)
First-principles study of diffusion of Li, Na, K and Ag in ZnO
Gui-Yang Huang et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2009)
The effect of bath temperature on the electrodeposition of zinc oxide thin films via an acetate medium
A. I. Inamdar et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2008)
Doping of ZnO by group-IB elements
Yanfa Yan et al.
APPLIED PHYSICS LETTERS (2006)
Diffusion of zinc vacancies and interstitials in zinc oxide
Paul Erhart et al.
APPLIED PHYSICS LETTERS (2006)