Effect of structural properties of InAs/GaAs QDs on optoelectronic devices

The efficiency of Quantum Dots (QDs) devices, is strongly related to their distribution, density and size, and shape in a QD array. The small size of the QD structure leads to a three-dimensional confinement of the electronic energies. The energy levels of electrons in QDs depends on their size-the smaller the quantum dot, the greater the amount of energy required to give electrons transitions to the next level. In this paper, we report the simulation results of pyramidal InAs/GaAs QDs coupled to Wetting Layer (WL). To investigate the effects of the InAs/GaAs QDs size on the electronic states and the transition energy. In the first part, we calculate the strain distribution to find the band edges, while the second one concerns the variation of the electronic transition energy as a function of quantum dots size by solving the stationary Schrodinger equation. This work shows clearly that the structural properties of QDs have strong effects on optoelectronic properties devices based on these nanostructures. (c) 2021 Elsevier Ltd. All rights reserved. Selection and peer-review under responsibility of the scientific committee of the Fourth edition of the International Conference on Materials & Environmental Science.

Automated summary

The efficiency of Quantum Dots devices is closely related to their distribution, density, size, and shape in an array, with small QD structures leading to three-dimensional confinement of electronic energies. The energy levels of electrons in QDs depend on their size, and the structural properties have a strong impact on optoelectronic devices.