Journal
IEEE ELECTRON DEVICE LETTERS
Volume 42, Issue 7, Pages 1021-1024Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2021.3081627
Keywords
Photodetectors; Photoconductivity; Performance evaluation; Electrodes; Printing; Fabrication; Wires; Back-to-back Schottky diode; copper oxide; photodetector; printing; single-nanowire; white light
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Funding
- Ministry of Electronics and Information Technology (MeitY), Government of India [5(9)/2012-NANO]
- Centre for Excellence in Nanoelectronics and TheranosticDevices (CENTD), IIT Guwahati
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This letter presents the fabrication of a copper-oxide single-nanowire back-to-back Schottky diode for white light detection, which exhibits remarkable photodetection performance. The device shows a dark current of 1.40 nA and a photocurrent of 2.55 mu A under a +/- 6 V bias, with an external quantum efficiency of 9.95 x 10(5) %.
This letter reports the fabrication of copper-oxide (CuO) single-nanowire (SNW) back-to-back Schottky diode for white light detection. The device fabrication includes the synthesis of nanowires by thermal oxidation of copper, followed by microcantilever contact print (mu CCP) of silver nanoparticles (AgNP) electrodes. The metal-semiconductor-metal (MSM) structure exhibits a dark current of 1.40 nA and photocurrent of 2.55 mu A for +/- 6 V bias. The AgNP/CuO SNW/AgNP device reveals a sharp rise and recovery for continuous operation under the bias stress. Further, fabricated device exhibits a remarkable photodetection with photosensitivity 1820, responsivity 4085 AW(-1), detectivity 3.81 x 10(13)cmHz(0.)5 W-1, and external quantum efficiency of 9.95 x 10(5) %.
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