606-nm InGaN Amber Micro-Light-Emitting Diodes With an On-Wafer External Quantum Efficiency of 0.56%

We demonstrated amber InGaN 47 x 47 mu m(2) micro-light-emitting diodes (mu LEDs) with the peak wavelength of 606 nm and full-width at maximum (FWHM) of 50 nm at 20 A/cm(2). The amber mu LEDs exhibited a 33-nm blue-shift of the peak wavelength and obtain broader FWHMs to approximately 56 nm at 5 to 100 A/cm(2). The peak on-wafer external quantum efficiency was 0.56% at 20 A/cm(2). The characteristic temperature was 50-80 K at 20 to 60 A/ cm(2) but increased to 120-140 K at 80 to 100 A/cm(2). The strong increase in the characteristic temperature from 60 to 80A/cm(2) couldmainly be attributed to the saturation of the Shockley-Read-Hall non-radiative recombination at high current densities.

Automated summary

Amber InGaN micro-light-emitting diodes were demonstrated with varying peak wavelengths, full-width values, external quantum efficiency, and characteristic temperatures at different current densities. The study showed changes in performance characteristics such as blue shift, increased FWHM, external quantum efficiency, and characteristic temperature with increasing current density, mainly due to the saturation of non-radiative recombination processes.