Journal
IEEE ELECTRON DEVICE LETTERS
Volume 42, Issue 7, Pages 998-1001Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2021.3077894
Keywords
Phototransistors; Broadband communication; Photodetectors; Absorption; Optical films; Heterojunctions; Optical imaging; Photodetectors; transistors; phototransistors; broadband; heterojunction
Categories
Funding
- NSFC [61805160]
- Guangdong Basic and Applied Basic Research Foundation [2021A1515011858]
- Science and Technology Innovation Commission of Shenzhen [JCYJ20180305125423315]
- Natural Science Foundation of SZU [860-000002110638, 860-000002110423]
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This letter discusses the design of bipolar phototransistors based on wide bandgap organic-inorganic semiconductor bilayer structure for broadband optical detection. By carefully selecting materials and matching energy levels, the phototransistors can detect light from ultraviolet to near-infrared. Through field effect regulation, dark current is suppressed and the phototransistors exhibit high normalized detectivity.
In this letter, bipolar phototransistors based on wide bandgap organic-inorganic semiconductor bilayer structure are designed for broadband optical detection. Through purposeful material selection and band matching, the energy level difference of heterojunction interface is obtained to promote photo-induced charge separation and realize optical detection from ultraviolet to near-infrared. Via the suppression of dark current by field effect regulation, the phototransistors demonstrate high normalized detectivity (10(14) - 10(15) jones). The diversity of organic semiconductor materials provides a wide range of choices to realize broadband detection by the band matching with inorganic semiconductor materials.
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