Journal
INORGANIC CHEMISTRY FRONTIERS
Volume 8, Issue 15, Pages 3733-3739Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/d1qi00552a
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Funding
- National Natural Science Foundation of China [21872147, 22022110]
- Key Research Program of Frontier Sciences, CAS [ZDBS-LY-SLH028]
- DNL Cooperation Fund, CAS [DNL201924]
- Strategic Priority Research Program, CAS [XDB20000000]
- Chinese Scholarship Council
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SiC nanowire arrays were successfully synthesized using a simple and cost-effective method, showing potential for photoelectrocatalytic oxygen evolution reaction. The research provides new possibilities for practical applications of SiC-based nanostructures in the field of photoelectrochemistry.
SiC nanowire arrays are obtained by a one-step, template-, solvent-, and catalyst-free synthesis technique that reaches completion within 5 min and employs a low-cost single precursor. The as-grown SiC quasi-aligned nanowires show a gray color on carbon paper with a (111) single crystalline orientation of the 3C-SiC structure. The growth mechanism of 3C-SiC is proposed with the vapor-solid mechanism. The prepared 3C-SiC nanowires exhibited a wide UV-vis absorption range with a bandgap of 2.15 eV, making it a potential semiconductor for the photoelectrocatalytic oxygen evolution reaction (PEC-OER). Photo-deposited RuOx/SiC/C substrates were prepared as SiC-based nanostructures for the PEC-OER, showing an efficient OER photoelectroactivity with a 350 mV overpotential at 10 mA cm(-2) and a significant power photoconversion efficiency of 54%. This work presents SiC/C as a promising semiconductor for the PEC-OER and rapid SiC production feasibility for practical applications and beyond.
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