4.8 Article

Boosted charge extraction of NbOx-enveloped SnO2 nanocrystals enables 24% efficient planar perovskite solar cells

Journal

ENERGY & ENVIRONMENTAL SCIENCE
Volume 14, Issue 9, Pages 5074-5083

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/d1ee01519b

Keywords

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Funding

  1. National Natural Science Foundation of China [21773218]
  2. National Key Research and Development Program of China [2017YFA0207400]
  3. Key Research and Development Projects of Sichuan province [2017GZ0052]
  4. China Postdoctoral Science Foundation [2019M653485]
  5. Anshan Hifichem Co. Ltd.

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In this study, low-temperature processed SnO2/NbOx nanocrystals were reported as efficient electron transport materials (ETMs) for planar perovskite solar cells (PSCs), achieving an impressive power conversion efficiency (PCE) of 24.01% with remarkable device stability. The NbOx layer passivates defects, promotes charge extraction, and improves perovskite film crystallinity, leading to enhanced device performance. This work provides a facile approach for low-temperature processed ETMs with boosted carrier extraction ability, offering excellent efficiency and stability for planar PSCs.
Planar perovskite solar cells (PSCs) have attracted extensive research attention owing to their simple architecture and manufacturing process. Improving the charge extraction ability of electron transport materials (ETMs) is imperative to enhance their power conversion efficiencies (PCEs). Herein, we report low-temperature solution-processed SnO2 nanocrystals (SnO2 NCs) enveloped by amorphous NbOx (SnO2/NbOx) as efficient ETMs for planar PSCs, achieving an impressive PCE of 24.01% with negligible hysteresis, which is significantly superior to that of PSCs made from commercial SnO2 (with PCEs up to 21.96%) and self-developed SnO2 NCs (with PCEs up to 23.01%). The NbOx layer can simultaneously passivate defects at the ETMs/perovskite interface, promote charge extraction from perovskites, and improve the crystallinity of perovskite films. The unencapsulated PSC retains over 85% of its initial efficiency after 1000 h of light soaking (one sun), showing remarkable device stability. Furthermore, the low-temperature processed SnO2/NbOx ETMs are compatible with flexible substrates and present a maximum PCE of 20.00%. This work offers a facile approach to low-temperature processed ETMs with boosted carrier extraction ability, affording excellent device efficiency and stability for planar PSCs.

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