4.4 Article

Graphene Directly Growth on Non-Metal Substrate from Amorphous Carbon Nano Films Without Transfer and Its Application in Photodetector

Journal

SCIENCE OF ADVANCED MATERIALS
Volume 13, Issue 4, Pages 574-582

Publisher

AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/sam.2021.3914

Keywords

Graphene; Transfer Free Growth; Grapheme-Silicon Photodetector; Amorphous Carbon; Catalysis

Funding

  1. National Natural Science Foundation of China [61704156, 11704344, 51472221, 11847099]
  2. Key Scientific Research Projects of universities in Henan Province [21B140010, 18A140033, 19A140018]
  3. Aeronautical Science Foundation of China [2019ZF055002]

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High-quality graphene film was successfully prepared through magnetron sputtering and chemical vapor deposition, demonstrating the conversion from amorphous carbon to monolayer graphene. This technique is characterized by its simplicity and wider processing window, and the produced graphene film exhibits excellent crystallinity and conductivity.
A layer of nano amorphous carbon was fabricated on the target substrate by precisely controlled magnetron sputtering, and then a layer of copper film was fabricated on the amorphous carbon. By using a vertical cold wall chemical vapor deposition system under protective atmosphere, the carbon atoms at high temperature was catalyzed by copper to form graphene films. The amorphous carbon nano thin film was converted into monolayer graphene on a SiO2 substrate directly. The experimental results show that the graphene film has high crystal quality and conductivity. Compared with other methods, the process is simple and the process window is wider. By virtue of this technique, a graphene-Si photodetector was also demonstrated. The photoelectric response and frequency characteristics have been studied which shows good device characteristics.

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