Journal
IEEE SENSORS JOURNAL
Volume 21, Issue 13, Pages 14807-14814Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSEN.2021.3074623
Keywords
Logic gates; Films; Thin film transistors; Dielectrics; Sputtering; Silicon; Conductivity; DUV detectors; gallium oxide; magnetron sputtering; oxide semiconductors; phototransistors; thin film transistors; wide band gap
Funding
- CONACyT Ph.D. Fellowship
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In this study, a simple and cost-effective method for fabricating thin film transistors (TFTs) based on undoped amorphous Ga2O3 thin films deposited at room temperature by magnetron sputtering is discussed. The control of Ga2O3 thin film resistivity over a wide range is demonstrated by controlling the deposition power and pressure. These TFTs exhibit promising characteristics and have been evaluated as phototransistors under DUV radiation, showing high rejection ratio, responsivity, gain, detectivity, and photosensitivity.
In recent years beta-Ga2O3 thin films and crystals have gained attention as excellent candidates for transparent and high-power applications due to its wide band gap (4.6 - 4.9 eV) and large breakdown field (similar to 8 mV/cm). However, beta-Ga2O3 single crystals and highly crystalline beta-Ga2O3 thin films require high temperature, long processing times and, often, expensive tools that limit integration with other technologies. Amorphous Ga2O3 has not been studied as intensely as beta-Ga2O3 and mostly metal-semiconductor-metal (MSM) structures and diodes using this material have been reported. In this paper, we discuss a simple and economical method to fabricate thin film transistors (TFTs) based on un-doped amorphous Ga2O3 thin films deposited at room temperature by magnetron sputtering. Control of the Ga2O3 thin films resistivity over a wide range is demonstrated by controlling the deposition power and pressure. The TFTs show a threshold voltage (V-T) of 0.92 V, saturation mobility (mu(sat)) of 0.511 cm(2)/V.s and subthreshold slope (SS) of 83.62 mV/dec. More importantly, these devices have been evaluated as phototransistors, which has not been intensely studied yet. The phototransistors tested under DUV radiation exhibited a rejection ratio UV-Visible of 10(3) and responsivity of 10(2)A/W (V-G = 0 V) and 10(4) A/W (V-G = 6 V), gain of 10(3), specific detectivity of 10(15) Jones and a photosensitivity of 10(7).
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