Journal
NANOSCALE
Volume 13, Issue 28, Pages 12306-12313Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/d1nr02037d
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Funding
- Science Fund for Creative Research Groups of the National Natural Science Foundation of China [61421002]
- National Natural Science Foundation of China [61875031]
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PbS/PMMA/PbSe CQD silicon-based photodetectors exhibit selectivity and high performance, with tunable spectral range adjustment by QD size, easy integration with silicon, meeting diverse field requirements.
Traditional photodetectors usually respond to photons larger than the bandgap of a photosensitive material. In contrast to traditional photodetectors for broad-spectrum detection, the currently reported PbS/PMMA/PbSe CQD silicon-based photodetectors can detect spectrally selective light sources. This is attributed to two layers with specific functions, a filter layer on top and a photosensitive layer in contact with the silicon channel. Each of the target sources of the device has a selectivity factor of more than 10 against non-target sources. The s-PD (selective photodetector) has three significant advantages: the ability to tunably adjust the detectable spectral range by easily adjusting the size of QDs. The second is using a new architecture to achieve a high-performance selective photodetector, and finally, the ease-of-integration with silicon. The above features enable the device to meet the needs of particular fields such as secure communication, surveillance, and infrared imaging.
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