4.7 Article

Fluorinated Cross-linkable and Dopant-free hole transporting materials for efficient and stable perovskite solar cells

Journal

CHEMICAL ENGINEERING JOURNAL
Volume 422, Issue -, Pages -

Publisher

ELSEVIER SCIENCE SA
DOI: 10.1016/j.cej.2021.130124

Keywords

Hole transporting material; Cross-linkable; Fluorination; Perovskite solar cells

Funding

  1. National Key Research and Development Project from the Ministry of Science and Technology of China [2016YFA0202400, 2016YFA0202404]
  2. Shenzhen Science and Technology Innovation Committee [KQTD2015033110182370]
  3. Leading Talents of Guangdong Province program [2016LJ06S686]
  4. Shenzhen Engineering R&D Center for Flexible Solar Cells - Shenzhen Development and Reform Committee [2019-126]
  5. Guangdong Basic and Applied Basic Research Foundation [2019B1515120083]

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Two novel hole transporting materials with thermally cross-linkable styryl groups were developed for perovskite solar cells, enabling in situ cross-linking and smooth, solvent-resistant film formation. The fluorination approach enhanced interactions between HTM, formamidine, and lead in perovskite, leading to improved efficiency and stability, with HTM-F showing higher power conversion efficiency and better retention of initial performance after prolonged exposure to air and heat compared to the fluorine-free HTM-H.
Two novel hole transporting materials (HTMs) bearing thermally cross-linkable styryl groups were developed and applied for perovskite solar cells. These HTMs could be in situ cross-linked under mild temperature. The resulted cross-linked HTMs form smooth, solvent-resistant films, which enables the subsequent spin-coating of perovskite layer. In addition, the fluorination approach successfully leads to strong interactions between HTM, formamidine (FA) and lead in perovskite, resulting in the passivation of the perovskite film. The device using the HTM with fluorine moieties (HTM-F) showed higher power conversion efficiency (PCE) of 20.51% than that of the device using fluorine-free HTM (HTM-H) of 19.07%. Moreover, the device with HTM-F exhibits better stability, retaining 90% of the initial PCE after 2000 h under ambient air and 91% of the initial PCE after 1000 h under 85 degrees C heating.

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