Configurable switching behavior in polymer-based resistive memories by adopting unique electrode/electrolyte arrangement

The difference in resistive switching characteristics by modifying the device configuration provides a unique operating principle, which is essential for both fundamental studies and the development of future memory devices. Here, we demonstrate the poly(methyl methacrylate) (PMMA)-based resistive switching characteristics using four different combinations of electrode/electrolyte arrangement in the device geometry. From the current-voltage (I-V) measurements, all the PMMA-based devices revealed nonvolatile memory behavior with a higher ON/OFF resistance ratio (similar to 10(5)-10(7)). Significantly, the current conduction in the filament and resistive switching behavior depend majorly on the presence of Al electrode and electrochemically active silver (Ag) element in the PMMA matrix. A trap-controlled space charge limited conduction (SCLC) mechanism constitutes the resistive switching in the Al/PMMA/Al device, whereas the current conduction governed by ohmic behavior influences the resistive switching in the Ag-including devices. The depth-profiling X-ray photoelectron spectroscopy (XPS) study evidences the conducting filament formation processes in the PMMA-based devices. These results with different conduction mechanisms provide further insights into the understanding of the resistive switching behavior in the polymer-based devices by simply rearranging the device configuration.

Automated summary

The resistive switching behavior in polymer-based devices is influenced by different conduction mechanisms, including the reliance on aluminum electrodes and electrochemically active silver elements for resistive behavior and rapid storage switching. X-ray photoelectron spectroscopy research has revealed the formation process of conducting filaments, providing deeper insights into understanding resistive behavior in polymer-based devices through rearranging device structures.