Growth and piezoelectric properties of large sized Ca3TaGa3Si2O14 crystals

Ca3TaGa3Si2O14 (CTGS) crystals are excellent high temperature piezoelectric materials. 4-6 inch CTGS crystals were successfully grown by the Czochralski method. The (110), (100) and (001) faces were strongly exposed, respectively, and the growth rate of the (001) faces was obviously faster than those of (100) and (110). The full width at half-maximum (FWHM) values of a 4 inch Y-cut CTGS wafer were found to be between 11.8 '' and 15.8 ''. The piezoelectric properties of CTGS were measured by the resonance method at room temperature. The piezoelectric coefficients d(11) and d(14) were found to be 4.07 pC N-1 and -14.01 pC N-1, and the electromechanical coupling coefficients k(12) and k(26) were determined to be 24.7% and 19.5%, respectively. All d(11) values of X-cut plates cut from different positions of the as-grown crystal were determined to be between 4.1 pC N-1 and 4.3 pC N-1. The electrical resistivities of the X-cut plates of CTGS were approximately 7.1 x 10(8) omega cm at 500 degrees C and 4.4 x 10(6) omega cm at 800 degrees C, respectively.

Automated summary

CTGS crystals are excellent high temperature piezoelectric materials grown by the Czochralski method. The crystals exhibit strong surface exposure on specific faces, with varying growth rates. They also demonstrate consistent piezoelectric properties and electrical resistivities at different temperatures.