Journal
ENERGY & ENVIRONMENTAL MATERIALS
Volume 4, Issue 4, Pages 500-501Publisher
WILEY
DOI: 10.1002/eem2.12228
Keywords
all-inorganic perovskite; depletion region width; doping; planar heterojunction
Categories
Funding
- Science and Technology Development Fund, Macao SAR [FDCT-0044/2020/A1, FDCT-091/2017/A2, FDCT-014/2017/AMJ]
- UM's research fund [MYRG2018-00148-IAPME]
- Natural Science Foundation of China [61935017]
- Natural Science Foundation of Guangdong Province, China [2019A1515012186]
- Guangdong-Hong Kong-Macao Joint Laboratory of Optoelectronic and Magnetic Functional Materials [2019B121205002]
Ask authors/readers for more resources
The article investigates the use of Nb-doped SnO2 as electron transporting layers in CsPbBr3 perovskite solar cells, which significantly improves the short-circuit current density.
All-inorganic metal-halide CsPbBr3 perovskite has emerged as an attractive photovoltaic material for its outstanding environmental stability. However, due to the wide bandgap, the performance of CsPbBr3 perovskite solar cells (PSCs) is limited, especially for the short-circuit current density (J(SC)). In this issue of Energy & Environmental Materials, Guo et al. employed Nb-doped SnO2 as electron transporting layers (ETLs), which could greatly improve the J(SC) of the PSCs based on all-inorganic CsPbBr3.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available