Journal
ENERGY & ENVIRONMENTAL MATERIALS
Volume 4, Issue 4, Pages 500-501Publisher
WILEY
DOI: 10.1002/eem2.12228
Keywords
all-inorganic perovskite; depletion region width; doping; planar heterojunction
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Funding
- Science and Technology Development Fund, Macao SAR [FDCT-0044/2020/A1, FDCT-091/2017/A2, FDCT-014/2017/AMJ]
- UM's research fund [MYRG2018-00148-IAPME]
- Natural Science Foundation of China [61935017]
- Natural Science Foundation of Guangdong Province, China [2019A1515012186]
- Guangdong-Hong Kong-Macao Joint Laboratory of Optoelectronic and Magnetic Functional Materials [2019B121205002]
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The article investigates the use of Nb-doped SnO2 as electron transporting layers in CsPbBr3 perovskite solar cells, which significantly improves the short-circuit current density.
All-inorganic metal-halide CsPbBr3 perovskite has emerged as an attractive photovoltaic material for its outstanding environmental stability. However, due to the wide bandgap, the performance of CsPbBr3 perovskite solar cells (PSCs) is limited, especially for the short-circuit current density (J(SC)). In this issue of Energy & Environmental Materials, Guo et al. employed Nb-doped SnO2 as electron transporting layers (ETLs), which could greatly improve the J(SC) of the PSCs based on all-inorganic CsPbBr3.
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