A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III-V-on-Si wafers

The heterogeneous integration of III-V devices with Si-CMOS on a common Si platform has shown great promise in the new generations of electrical and optical systems for novel applications, such as HEMT or LED with integrated control circuitry. For heterogeneous integration, direct wafer bonding (DWB) techniques can overcome the materials and thermal mismatch issues by directly bonding dissimilar materials systems and device structures together. In addition, DWB can perform at wafer-level, which eases the requirements for integration alignment and increases the scalability for volume production. In this paper, a brief review of the different bonding technologies is discussed. After that, three main DWB techniques of single-, double- and multi-bonding are presented with the demonstrations of various heterogeneous integration applications. Meanwhile, the integration challenges, such as micro-defects, surface roughness and bonding yield are discussed in detail.

Automated summary

This paper provides a brief overview of the background of heterogeneous integration and the application of direct wafer bonding (DWB) technology. Demonstrations of various heterogeneous integration applications are presented using single-, double- and multi-bonding techniques, while also discussing the challenges in the integration process.