4.7 Article

Ultra-broad absorption band of a Dy3+-doped Gd3Sc2Al3O12 garnet crystal at around 450 nm: a potential crystal for InGaN LD-pumped all-solid-state yellow lasers

Journal

CRYSTENGCOMM
Volume 23, Issue 32, Pages 5481-5488

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/d1ce00596k

Keywords

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Funding

  1. Natural Science Foundation of Anhui Province [2008085QF313]
  2. University Natural Science Research Project of Anhui Province, China [KJ2019ZD06]

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This study successfully synthesized a high-quality Dy:GSAG crystal with excellent optical properties, making it a potential candidate for an all-solid-state yellow laser at 582 nm. The crystal exhibited ultra-broad absorption and emission bands, high absorption and emission cross-sections, and a fluorescence quantum efficiency much higher than that of Dy:YAG crystals. Additionally, evident yellow and white light emissions were observed directly in the crystal under specific laser excitations.
In this study, for the first time, a high-quality 2 at% Dy3+-doped Gd3Sc2Al3O12 (Dy:GSAG) single crystal was grown successfully by the Czochralski method. Spectroscopic properties of the crystal were investigated in detail. The crystal shows an ultra-broad absorption band at around 447 nm with FWHM of 31 nm. The absorption cross-section at 447 nm and emission cross-section at 582 nm are evaluated to be as high as 0.307 x 10(-20) cm(2) and 0.390 x 10(-20) cm(2), respectively. Three intensity parameters omega(t) (t = 2, 4, and 6) as well as spectral parameters were obtained based on the Judd-Ofelt calculation. The fluorescence quantum efficiency eta for the F-4(9/2) level was evaluated to be 77.2%, which was much higher than that of the Dy:YAG crystal. In addition, evident yellow light emitting and white light emission were directly observed in the crystal under 450 nm and 355 nm horizontal and vertical laser excitation, respectively. The results indicate that the Dy:GSAG crystal could be a potential candidate for all-solid-state yellow lasers at 582 nm pumped by a blue InGaN laser-diode.

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