Journal
2021 INTERNATIONAL SYMPOSIUM ON ELECTRICAL AND ELECTRONICS ENGINEERING (ISEE 2021)
Volume -, Issue -, Pages 26-29Publisher
IEEE
DOI: 10.1109/ISEE51682.2021.9418772
Keywords
Ka band LNA; MMIC; GaN; 5G
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A Ka band MMIC LNA design was presented, using a common source configuration with inductive degeneration for all transistors to balance input match and noise figure. The design achieved high linearity with a high output 1 dB compression point and saturated output power.
A Ka band Monolithic Microwave Integrated Circuit (MMIC) low noise amplifier (LNA) design is presented. Common source configuration with inductive degeneration was used for all transistors to balance the input match and noise figure (NF). A 4-stage 150nm Gallium Nitride (GaN) LNA has the typical NF of 3.7 dB and the minimum small signal gain of above 19.7 dB over the bandwidth of 35-37 GHz. High linearity is achieved with more than 21.6 dBm output 1 dB compression point (OP1dB) and 22.7 dBm saturated output power (P-sat). The Ka band LNA has the die dimension of 4340x1200 mu m(2) .
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