Hafnium-zirconium oxide interface models with a semiconductor and metal for ferroelectric devices (Jun, 10.1039/d1na00230a, 2021)

Correction for 'Hafnium-zirconium oxide interface models with a semiconductor and metal for ferroelectric devices' by Kisung Chae et al., Nanoscale Adv., 2021, DOI: 10.1039/d1na00230a.

Automated summary

The correction for the interface models of hafnium-zirconium oxide with a semiconductor and metal aims to enhance the performance of ferroelectric devices, as studied by Kisung Chae and colleagues in Nanoscale Adv., 2021.