Journal
2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM)
Volume -, Issue -, Pages -Publisher
IEEE
DOI: 10.1109/EDTM50988.2021.9420915
Keywords
MoS2; different metal gates and inverter
Categories
Funding
- National Key Research and Development Program [2016YFA0203900]
- Shanghai Municipal Science and Technology Commission [18JC1410300]
- National Natural Science Foundation of China [51802041, 61904032, 61874154]
Ask authors/readers for more resources
The electrical properties of MoS2 transistors have been manipulated using metal gates with different work functions to modulate the threshold voltage, which is critical for optimizing the matching levels of electrical properties. The optimized inverters show controllable inverter threshold voltages and the obtained voltage gain is over 35.
Various methods have been investigated to manipulate the electrical properties of MoS2 transistors to achieve applicable logic levels, which are essential for integrated multistage logic circuits. A doping-free strategy by using metal gates with different work functions is demonstrated to modulate threshold voltage (V-TH), which is critical for optimizing the matching levels of electrical properties. The optimized inverters show controllable inverter threshold voltages from 0.2 V to 0.6 V and the obtained voltage gain is over 35.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
