Journal
2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM)
Volume -, Issue -, Pages -Publisher
IEEE
DOI: 10.1109/EDTM50988.2021.9420815
Keywords
MoTe2; MoS2; heterojunction
Categories
Funding
- Natural Science Foundation of China [61874154, 21771040, 62074043]
- Shanghai Municipal Science and Technology Commission [18JC1410300]
- National Key Research and Development Program [2017YFA0207303, 2016YFA0203900]
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This work demonstrates the fabrication and characterization of large-area van der Waals heterostructure array composed of CVD grown 2H-MoTe2 and 2H-MoS2, showing excellent rectifier properties. The study also investigates the transfer characteristics of FETs, achieving homogeneity and high device performance, which advances the application of 2D materials in electronics.
We demonstrate the fabrication and characterization of large-area van der Waals heterostructure array composed of chemical vapor deposition (CVD) grown multilayer (ML) 2H-MoTe2 and single-layer (SL) 2H-MoS2, which exhibits excellent rectifier properties. The transfer characteristics of field-effect transistors (FETs) are also investigated. Our work acquires excellent homogeneity and device performance, which facilitates the application of two-dimensional (2D) materials in electronics.
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