Related references
Note: Only part of the references are listed.Crystalline quality improvement of face-to-face annealed MOVPE-grown AlN on vicinal sapphire substrate with sputtered nucleation layer
Shigeyuki Kuboya et al.
JOURNAL OF CRYSTAL GROWTH (2020)
Flexible graphene-assisted van der Waals epitaxy growth of crack -free AlN epilayer on SiC by lattice engineering
Yunyu Wang et al.
APPLIED SURFACE SCIENCE (2020)
Quasi-2D Growth of Aluminum Nitride Film on Graphene for Boosting Deep Ultraviolet Light-Emitting Diodes
Hongliang Chang et al.
ADVANCED SCIENCE (2020)
Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate
Haiding Sun et al.
ADVANCED FUNCTIONAL MATERIALS (2019)
2D AlN Layers Sandwiched Between Graphene and Si Substrates
Wenliang Wang et al.
ADVANCED MATERIALS (2019)
Carrier localization structure combined with current micropaths in AlGaN quantum wells grown on an AIN template with macrosteps
K. Kojima et al.
APPLIED PHYSICS LETTERS (2019)
Research status and prospects of deep ultraviolet devices
Hideki Hirayama
JOURNAL OF SEMICONDUCTORS (2019)
The defect evolution in homoepitaxial AlN layers grown by high-temperature metal-organic chemical vapor deposition
Ke Jiang et al.
CRYSTENGCOMM (2018)
AlGaN photonics: recent advances in materials and ultraviolet devices
Dabing Li et al.
ADVANCES IN OPTICS AND PHOTONICS (2018)
X-ray photoelectron spectroscopy studies on AlN thin films grown by ion beam sputtering in reactive assistance of N+/N2+ ions: Substrate temperature induced compositional variations
Neha Sharma et al.
THIN SOLID FILMS (2017)
Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing
Hideto Miyake et al.
JOURNAL OF CRYSTAL GROWTH (2016)
Advances and prospects in nitrides based light-emitting-diodes
Li Jinmin et al.
JOURNAL OF SEMICONDUCTORS (2016)
Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates
Xiao-Hang Li et al.
APPLIED PHYSICS LETTERS (2014)
Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
Hideki Hirayama et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2014)
Defect analysis in AlGaN layers on AIN templates obtained by epitaxial lateral overgrowth
Anna Mogilatenko et al.
JOURNAL OF CRYSTAL GROWTH (2014)
In situ observation of two-step growth of AlN on sapphire using high-temperature metal-organic chemical vapour deposition
Xiaojuan Sun et al.
CRYSTENGCOMM (2013)
High quality AlGaN grown on ELO AlN/sapphire templates
U. Zeimer et al.
JOURNAL OF CRYSTAL GROWTH (2013)
AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
Myunghee Kim et al.
APPLIED PHYSICS EXPRESS (2011)
AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy
Yitao Liao et al.
APPLIED PHYSICS LETTERS (2011)
Improved Efficiency of 255-280 nm AlGaN-Based Light-Emitting Diodes
Cyril Pernot et al.
APPLIED PHYSICS EXPRESS (2010)
Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate
Chia-Hua Chan et al.
APPLIED PHYSICS LETTERS (2009)
Density functional theoretical study of surface structure and adatom kinetics for wurtzite AlN
Vibhu Jindal et al.
JOURNAL OF APPLIED PHYSICS (2009)
Ultraviolet light-emitting diodes based on group three nitrides
Asif Khan et al.
NATURE PHOTONICS (2008)
XPS analysis of aluminum nitride films deposited by plasma source molecular beam epitaxy
Leland Rosenberger et al.
SURFACE AND INTERFACE ANALYSIS (2008)
Effect of substrate temperature and bias voltage on the crystallite orientation in RF magnetron sputtered AIN thin films
F. Medjani et al.
THIN SOLID FILMS (2006)
Some effects of oxygen impurities on AlN and GaN
GA Slack et al.
JOURNAL OF CRYSTAL GROWTH (2002)
Vibrational properties of AlN grown on (111)-oriented silicon
T Prokofyeva et al.
PHYSICAL REVIEW B (2001)
Share Paper
