4.7 Article

Electrochemical synthesis of annealing-free and highly stable black-phase CsPbI3 perovskite

Journal

CHEMICAL COMMUNICATIONS
Volume 57, Issue 71, Pages 8981-8984

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/d1cc03661k

Keywords

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Funding

  1. National Natural Science Foundation of China [61875119, 61975221]
  2. Shanghai Rising-Star Program [19QA1404000]
  3. Youth Innovation Promotion Association CAS [2016237]
  4. Shanghai Talent Development Fund
  5. Shanghai Municipal Education Commission
  6. Shanghai Education Development Foundation [18CG63]
  7. Strategic Priority Research Program of CAS [XDB16030700, XDB43010303]
  8. Shanghai Science and Technology International Cooperation Fund [19520710200]
  9. Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning
  10. ``Chen Guang'' project

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The study presents a new strategy for the low-temperature preparation of highly stable black-phase CsPbI3 using electrochemical methods, which exhibits red luminescence and long-term stability in high humidity environments for up to 11 days.
All-inorganic CsPbI3 halide perovskite has become a hot research topic for applications in next-generation optoelectronic devices. However, the main limitations are the high-temperature synthesis and poor phase stability. In this study, we demonstrate a unique solution-phase strategy for the low-temperature preparation of black-phase CsPbI3 by in situ electrochemistry. By controllable adjustment of the electrochemical growth process, annealing-free black-phase CsPbI3 can be synthesized. The black-phase CsPbI3 showed high-purity red photoluminescence at approximately 690 nm with ultra-high environmental stability for up to 11 days at a high relative humidity of 70%. The underlying mechanisms of the formation of the highly stable black-phase CsPbI3 at room temperature have been discussed in this study. The results provide a new platform for the large scale, low-temperature, and convenient synthesis of black-phase CsPbI3 perovskite.

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