4.3 Article

Realization of Flexible Ultraviolet Organic Light-Emitting Diodes: Key Design Issues

Journal

ADVANCED PHOTONICS RESEARCH
Volume 2, Issue 9, Pages -

Publisher

WILEY
DOI: 10.1002/adpr.202100108

Keywords

flexible; organic light-emitting diodes; top emissions; ultraviolet

Funding

  1. National Research Foundation of Korea (NRF) - Ministry of Science and ICT [NRF-2016M3A7B4910631]
  2. Engineering Research Center of Excellence (ERC) [NRF-2017R1A5A1014708]

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Efforts are being made to develop UV OLEDs due to the unique applications of UV light in various areas. Challenges in realizing UV OLEDs include molecular instability, scarcity of emitting layers, and different optical properties from visible OLEDs. This study successfully achieves flexible UV OLEDs using specific emitters and innovative electrode structures, resulting in high transparency and narrow emission bandwidth.
While organic light-emitting diodes (OLEDs) have seen huge success as light sources in high-end displays, efforts are being made to extend their spectral coverage beyond the visible region. Among such endeavors, the development of ultraviolet (UV) OLEDs is particularly of interest due to the unique applications of UV light in a variety of areas such as security, sterilization, phototherapy, etc. However, OLEDs that emit UV light are very challenging to realize due to limitations such as high-energy-induced molecular instability, the rarity of adequate emitting layers, and material optical properties that are very different from those of visible OLEDs. Herein, UV OLEDs are realized using 3-(Biphenyl-4-yl)-5-(4-tertbutylphenyl)-4-phenyl-4H-1,2,4-triazole (TAZ) as emitters in both top-emitting and bottom-emitting configurations. High absorption of common plastic substrates is carefully considered, and semitransparent refractory characteristics of metals under UV are exploited to form flexible dielectric-metal-dielectric electrodes with high transparency in UV. As a result, highly flexible UV OLEDs with a peak wavelength of 371 nm and a full width half maximum as small as 13 nm are realized.

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