The effect of charge transfer transition on the photostability of lanthanide-doped indium oxide thin-film transistors

Amorphous oxide semiconductors are promising for their use in thin-film transistor (TFT) devices due to their high carrier mobility and large-area uniformity. However, their commercialization is limited by the negative gate bias stress experienced under continuous light illumination. Here, we report an approach to improve the negative bias illumination stress (NBIS) stability of amorphous oxide semiconductors TFTs by using lanthanide-doped indium oxide semiconductors as the channel layer. The effect of different lanthanide dopants on performances of solution-processed Ln:In2O3 TFTs are investigated. All lanthanides exhibit strong suppression of oxygen vacancy, which shift the V-on from -13.5 V of pure In2O3 TFT to -1 similar to 1 V of Ln:In2O3 TFTs (except Ce). However, only Pr:In2O3 and Tb:In2O3 TFTs exhibit much better NBIS stability with same Delta V-on of -3.0 V, compared to much higher Delta V-on of -7.9 similar to-15.6 V for other Ln:In2O3 TFTs. Our comprehensive study reveals that praseodymium and terbium act as a blue light down-conversion medium with low charge transfer transition energy for lowing photosensitivity of oxide semiconductors.

Automated summary

The stability of amorphous oxide semiconductor TFTs under negative bias illumination stress was improved by using lanthanide-doped indium oxide semiconductors as the channel layer. Lanthanide dopants effectively suppressed oxygen vacancies, with praseodymium and terbium showing the best NBIS stability compared to other lanthanide dopants. The study revealed that praseodymium and terbium act as blue light down-conversion media, reducing the photosensitivity of oxide semiconductors.