Journal
EUROPEAN JOURNAL OF INORGANIC CHEMISTRY
Volume -, Issue 13, Pages 1868-1876Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/ejic.201601419
Keywords
Chemical vapor deposition; Nickel; Precursors; Semiconductors; Thin films
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Funding
- Engineering and Physical Sciences Research Council (EPSRC) [EP/F056494/1, EP/F056710/1, EP/F056648/2]
- Engineering and Physical Sciences Research Council [EP/F056710/1, EP/J50001X/1, EP/F056648/2, EP/F056494/1] Funding Source: researchfish
- EPSRC [EP/F056494/1, EP/F056710/1, EP/J50001X/1, EP/F056648/2] Funding Source: UKRI
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A series of unsymmetrical nickel beta-diketonate derivatives have been synthesised and structurally characterised for application as atmospheric-pressure metal-organic chemical vapour deposition (AP-MOCVD) precursors for nickel oxide.TMEDA)Ni[MeC(O) CHC(O) OEt](2) (TMEDA = tetramethylethylenediamine) was selected and used to deposit NiO films of varying thickness onto commercial indium tin oxide (ITO)-coated glass; the work function of the ITO was raised as a consequence.
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