Journal
NANOSCALE
Volume 13, Issue 39, Pages 16622-16628Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/d1nr04588a
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Funding
- Natural Sciences and Engineering Research Council of Canada (NSERC) [RGPIN-2017-06069, RGPIN-2018-04642]
- Hart Professorship
- University of Toronto
- Canada Foundation for Innovation
- NSERC
- Government of Ontario
- Fed Dev Ontario
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This study reports a Pb-induced surface reconstruction on Bi/Si(111) alpha phase, with the atomic structure determined using STM and DFT. Quantum well states (QWSs) and a significant Rashba band splitting are predicted, comparable to other semiconductor heterostructures and significantly higher than Pb/Si(111) QWSs.
Quantum well states (QWSs) with sizable Rashba splitting are a promising quantum phase to achieve spin-split current for quantum computing and spintronics due to their controllable band structures. However, most QWSs were achieved upon metallic substrates with strong bulk electron transport. Developing semiconductor-based QWSs is preferable to minimize substrate interference. Here we report a Pb induced surface reconstruction on Bi/Si(111) alpha phase. Combining scanning tunneling microscopy (STM) and density functional theory (DFT) the atomic structure has been determined. QWSs and a sizable Rashba band splitting are predicted, with the latter comparable to what is found in other semiconductor heterostructures and an order of magnitude higher than that in Pb/Si(111) QWSs.
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