4.6 Article

An indenocarbazole-based host material for solution processable green phosphorescent organic light emitting diodes

Journal

RSC ADVANCES
Volume 11, Issue 47, Pages 29115-29123

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/d1ra04855d

Keywords

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Funding

  1. Ministry of Trade, Industry & Energy (MOTIE, Korea) [20011059, 20010443]
  2. Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [2021R1A2C1008725]
  3. BK21 FOUR Program - Ministry of Education (MOE, Korea)
  4. National Research Foundation of Korea (NRF) [21A20130000018]
  5. Korea Evaluation Institute of Industrial Technology (KEIT) [20010443] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
  6. National Research Foundation of Korea [21A20130000018, 2021R1A2C1008725] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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The newly designed host material shows excellent performance in green phosphorescent organic light-emitting diodes, achieving a maximum lifetime of 1300 hours and a high current efficiency of up to 66.3 cd A(-1). The design of the hole dominant material effectively reduces electron accumulation at the HTL and EML interface, leading to improved device performance.
We designed and synthesized a new host material with a highly soluble and thermally stable indenocarbazole derivative (7,7-dimethyl-5-phenyl-2-(9-phenyl-9H-carbazol-3-yl)-5,7-dihydro-indeno[2,1-b]carbazole) that can make green phosphorescent organic light-emitting diodes (PHOLEDs) in a solution process. In particular, these are used in a blue common layer structure in which green and red-emitting layers are formed by a solution process and blue common layers are thermally evaporated. The new host material possesses excellent hole transport capability and high triplet energy (T-1). Mainly we designed the hole dominant material to keep the exciton forming area away from the hole transport layer (HTL) and emitting layer (EML) interface, an interfacial mixing area to improve device performance. As a result, the greatest lifetime of 1300 hours was achieved and a high current efficiency of up to 66.3 cd A(-1) was recorded when we used the optimized device structure of a 5 nm thick bipolar exciton blocking layer (B-EBL). It may be a good agreement of exciton confinement and reduced electron accumulation at the HTL and EML interface.

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