Related references
Note: Only part of the references are listed.Dipole control of Rashba spin splitting in a type-II Sb/InSe van der Waals heterostructure
Donghui Wang et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2021)
Interface Transparency and Rashba Spin Torque Enhancement in WSe2 Heterostructures
Steve Novakov et al.
ACS APPLIED MATERIALS & INTERFACES (2021)
Layer- and gate-tunable spin-orbit coupling in a high-mobility few-layer semiconductor
Dmitry Shcherbakov et al.
SCIENCE ADVANCES (2021)
Design of van der Waals interfaces for broad-spectrum optoelectronics
Nicolas Ubrig et al.
NATURE MATERIALS (2020)
Ultra-thin van der Waals crystals as semiconductor quantum wells
Johanna Zultak et al.
NATURE COMMUNICATIONS (2020)
Questaal: A package of electronic structure methods based on the linear muffin-tin orbital technique
Dimitar Pashov et al.
COMPUTER PHYSICS COMMUNICATIONS (2020)
Indirect-to-direct bandgap transition in bilayer InSe: roles of twistronics
Peng Kang
2D MATERIALS (2020)
Crossover from weakly indirect to direct excitons in atomically thin films of InSe
Adrian Ceferino et al.
PHYSICAL REVIEW B (2020)
Many-body renormalization of the electron effective mass of InSe
Wenbin Li et al.
PHYSICAL REVIEW B (2020)
Gate-tunable strong spin-orbit interaction in two-dimensional tellurium probed by weak antilocalization
Chang Niu et al.
PHYSICAL REVIEW B (2020)
Resonant tunnelling into the two-dimensional subbands of InSe layers
Zakhar R. Kudrynskyi et al.
COMMUNICATIONS PHYSICS (2020)
Tuning spin-orbit coupling in 2D materials for spintronics: a topical review
Kasun Premasiri et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2019)
Dimensional Crossover in the Carrier Mobility of Two-Dimensional Semiconductors: The Case of InSe
Wenbin Li et al.
NANO LETTERS (2019)
Strong Electron-Phonon Coupling and its Influence on the Transport and Optical Properties of Hole-Doped Single-Layer InSe
A. Lugovskoi et al.
PHYSICAL REVIEW LETTERS (2019)
Indirect to Direct Gap Crossover in Two-Dimensional InSe Revealed by Angle-Resolved Photoemission Spectroscopy
Matthew J. Hamer et al.
ACS NANO (2019)
Spin-charge conversion in InSe bilayers
Ma Zhou et al.
PHYSICAL REVIEW B (2019)
Current-induced spin polarization in monolayer InSe
Ma Zhou et al.
PHYSICAL REVIEW B (2019)
Tuning Rashba Spin-Orbit Coupling in Gated Multilayer InSe
Kasun Premasiri et al.
NANO LETTERS (2018)
Synthesis of Large-Area InSe Monolayers by Chemical Vapor Deposition
Han-Ching Chang et al.
SMALL (2018)
Infrared-to-violet tunable optical activity in atomic films of GaSe, InSe, and their heterostructures
Daniel J. Terry et al.
2D MATERIALS (2018)
Hybrid k • p tight-binding model for intersubband optics in atomically thin InSe films
S. J. Magorrian et al.
PHYSICAL REVIEW B (2018)
Spin transport in high-mobility graphene on WS2 substrate with electric-field tunable proximity spin-orbit interaction
S. Omar et al.
PHYSICAL REVIEW B (2018)
Gate-tunable weak antilocalization in a few-layer InSe
Junwen Zeng et al.
PHYSICAL REVIEW B (2018)
High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe
Denis A. Bandurin et al.
NATURE NANOTECHNOLOGY (2017)
Giant Quantum Hall Plateau in Graphene Coupled to an InSe van der Waals Crystal
Z. R. Kudrynskyi et al.
PHYSICAL REVIEW LETTERS (2017)
Electrical gate control of spin current in van der Waals heterostructures at room temperature
Andre Dankert et al.
NATURE COMMUNICATIONS (2017)
Spin-orbit coupling, optical transitions, and spin pumping in monolayer and few-layer InSe
S. J. Magorrian et al.
PHYSICAL REVIEW B (2017)
Weak antilocalization induced by Rashba spin-orbit interaction in layered III-VI compound semiconductor GaSe thin films
Shoichi Takasuna et al.
PHYSICAL REVIEW B (2017)
Multiband k . p theory of monolayer XSe (X=In, Ga)
Ma Zhou et al.
PHYSICAL REVIEW B (2017)
High-Mobility InSe Transistors: The Role of Surface Oxides
Po-Hsun Ho et al.
ACS NANO (2017)
Model spin-orbit coupling Hamiltonians for graphene systems
Denis Kochan et al.
PHYSICAL REVIEW B (2017)
Nanotexturing To Enhance Photoluminescent Response of Atomically Thin Indium Selenide with Highly Tunable Band Gap
Mauro Brotons-Gisbert et al.
NANO LETTERS (2016)
Origin and Magnitude of 'Designer' Spin-Orbit Interaction in Graphene on Semiconducting Transition Metal Dichalcogenides
Zhe Wang et al.
PHYSICAL REVIEW X (2016)
Electronic and optical properties of two-dimensional InSe from a DFT-parametrized tight-binding model
S. J. Magorrian et al.
PHYSICAL REVIEW B (2016)
Spin-orbit coupling and spin relaxation in phosphorene: Intrinsic versus extrinsic effects
Marcin Kurpas et al.
PHYSICAL REVIEW B (2016)
High Broad-Band Photoresponsivity of Mechanically Formed InSe-Graphene van der Waals Heterostructures
Garry W. Mudd et al.
ADVANCED MATERIALS (2015)
Quality Heterostructures from Two-Dimensional Crystals Unstable in Air by Their Assembly in Inert Atmosphere
Y. Cao et al.
NANO LETTERS (2015)
New perspectives for Rashba spin-orbit coupling
A. Manchon et al.
NATURE MATERIALS (2015)
Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform
Xu Cui et al.
NATURE NANOTECHNOLOGY (2015)
Symmetry, distorted band structure, and spin-orbit coupling of group-III metal-monochalcogenide monolayers
Pengke Li et al.
PHYSICAL REVIEW B (2015)
Weak localization, spin relaxation, and spin diffusion: Crossover between weak and strong Rashba coupling limits
Yasufumi Araki et al.
PHYSICAL REVIEW B (2014)
Electrons and phonons in single layers of hexagonal indium chalcogenides from ab initio calculations
V. Zolyomi et al.
PHYSICAL REVIEW B (2014)
Transition from parabolic to ring-shaped valence band maximum in few-layer GaS, GaSe, and InSe
Dmitry V. Rybkovskiy et al.
PHYSICAL REVIEW B (2014)
Tuning the Bandgap of Exfoliated InSe Nanosheets by Quantum Confinement
Garry W. Mudd et al.
ADVANCED MATERIALS (2013)
Strong Tuning of Rashba Spin-Orbit Interaction in Single InAs Nanowires
Dong Liang et al.
NANO LETTERS (2012)
Spin-orbit coupling in double-sided doped InAs quantum well structures
Kyung-Ho Kim et al.
APPLIED PHYSICS LETTERS (2010)
Rashba and intrinsic spin-orbit interactions in biased bilayer graphene
Ralph van Gelderen et al.
PHYSICAL REVIEW B (2010)
Intersubband-induced spin-orbit interaction in quantum wells
Rafael S. Calsaverini et al.
PHYSICAL REVIEW B (2008)
Nondiffusive weak localization in two-dimensional systems with spin-orbit splitting of the spectrum
M. M. Glazov et al.
SEMICONDUCTORS (2006)
Gate control of the giant Rashba effect in HgTe quantum wells
J Hinz et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2006)
Weak antilocalization in high-mobility two-dimensional systems
LE Golub
PHYSICAL REVIEW B (2005)
Spintronics: Fundamentals and applications
I Zutic et al.
REVIEWS OF MODERN PHYSICS (2004)
Spin splitting of subband energies due to inversion asymmetry in semiconductor heterostructures
W Zawadzki et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2004)
Share Paper
