Journal
PHYSICAL REVIEW B
Volume 104, Issue 12, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.104.125432
Keywords
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Funding
- ARCHER national UK supercomputer (RAP Project) [e547]
- EPSRC CDT Graphene [NOWNANOEP/L01548X]
- ERC Synergy Grant Hetero2D [EP/N010345]
- Lloyd Register Foundation Nanotechnology grant
- European Quantum Technology Flagship Project [2D-SIPC]
- Core 3 European Graphene Flagship Project
- EPSRC [EP/N010345/1] Funding Source: UKRI
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The paper demonstrates the tunability of spin-orbit coupling strength in few-layer gamma-InSe films, potentially enabling electrically switchable spintronic devices. Theoretical calculations and experimental measurements show good agreement in terms of Dyakonov-Perel spin relaxation due to SOC.
We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer gamma-InSe films can be tuned over a wide range. This tunability is the result of a competition between film-thickness-dependent intrinsic and electric-field-induced SOC, potentially, allowing for electrically switchable spintronic devices. Using a hybrid k . p tight-binding model, fully parametrized with the help of density functional theory computations, we quantify SOC strength for various geometries of InSe-based field-effect transistors. The theoretically computed SOC strengths are compared with the results of weak antilocalization measurements on dual-gated multilayer InSe films, interpreted in terms of Dyakonov-Perel spin relaxation due to SOC, showing a good agreement between theory and experiment.
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