4.6 Article

Comparison of optical response from DFT random phase approximation and a low-energy effective model: Strained phosphorene

Journal

PHYSICAL REVIEW B
Volume 104, Issue 11, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.104.115144

Keywords

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Funding

  1. UNINETT Sigma2 - the National Infrastructure for High Performance Computing and Data Storage in Norway, NOTUR/Sigma2 Project [NN9497K]
  2. Naval Air Warfare Center Weapons Division (NAWCWD) In Laboratory Independent Research (ILIR) program
  3. DOD HPCMP

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The study compares the dispersive permittivity tensor of materials using a low-energy model and density functional theory, revealing general agreement in low-strain and low-frequency regimes but significant discrepancies in other areas. It suggests a need for revisiting and improving the random phase approximation used in widely-used DFT packages. The study highlights the pivotal role phosphorene can play in optoelectronics devices and emphasizes the importance of reliable predictions for precise device design.
The engineering of the optical response of materials is a paradigm that demands microscopic-level accuracy and reliable predictive theoretical tools. Here we compare and contrast the dispersive permittivity tensor, using both a low-energy effective model and density functional theory (DFT). As a representative material, phosphorene subject to strain is considered. Employing a low-energy model Hamiltonian with a Green's function current-current correlation function, we compute the dynamical optical conductivity and its associated permittivity tensor. For the DFT approach, first-principles calculations make use of the first-order random phase approximation. Our results reveal that although the two models are generally in agreement within the low-strain and low-frequency regime, the intricate features associated with the fundamental physical properties of the system and optoelectronics devices implementation such as band gap, Drude absorption response, vanishing real part, absorptivity, and sign of permittivity over the frequency range show significant discrepancies. Our results suggest that the random phase approximation employed in widely used DFT packages should be revisited and improved to be able to predict these fundamental electronic characteristics of a given material with confidence. Furthermore, employing the permittivity results from both models, we uncover the pivotal role that phosphorene can play in optoelectronics devices to facilitate highly programable perfect absorption of electromagnetic waves by manipulating the chemical potential and exerting strain and illustrate how reliable predictions for the dielectric response of a given material are crucial to precise device design.

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