Journal
2021 IEEE 48TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)
Volume -, Issue -, Pages 1324-1327Publisher
IEEE
DOI: 10.1109/PVSC43889.2021.9518490
Keywords
photovoltaic; mixed perovskite; PIN; anti-solvent ejection time; X-ray diffraction
Funding
- Conseil Savoie Mont Blanc
- University Savoie Mont Blanc
- Commissariat a l'energie atomique et aux energies alternatives
- EU Framework Program for Research and Innovation HORIZON 2020 (Cofund ERA-NET Action) [691664]
- PROPER project - EIG Concert Japan
- French National Centre for Scientific Research [IRUEC 222437]
- French National Research Agency, through Investments for Future Program [ANR-18EURE-0016-Solar Academy]
- H2020 Societal Challenges Programme [691664] Funding Source: H2020 Societal Challenges Programme
Ask authors/readers for more resources
This paper focuses on the development of PIN devices using a mixed cations and anions perovskite and optimizing their performance to be comparable to NIP architectures.
This paper focuses on the development of PIN devices using a mixed cations and anions perovskite recently developed for stable standard NIP architectures. The inverted perovskite solar cells seem particularly interesting for highly efficient perovskite-silicon tandem cell applications. The hole transporting material was here varied. It plays a crucial role as perovskite's sub-layer in the PIN setups. The cells were optimized varying the Anti-Solvent Ejection time (t(ASE)). The mixed perovskite FA(0.94)Cs(0.06P)b(I0.88Br0.12)(3) has been successfully deposited on PEDOT:PSS, PTAA and TFB polymeric materials. The specific adjustment of the tASE allowed us to reach PIN-(p)hotovoltaic performances comparable to the NIP architectures.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
