Journal
2021 IEEE 48TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)
Volume -, Issue -, Pages 621-626Publisher
IEEE
DOI: 10.1109/PVSC43889.2021.9519098
Keywords
photovoltaics; CdTe; CST; 3D-EBSD; grain size; texture; depth
Ask authors/readers for more resources
3D electron backscatter diffraction (3D EBSD) was conducted on CdTe thin film solar cells with a graded CdSeTe (CST) layer, revealing changes in texture and grain size when transitioning from CdTe to CST. The CST layer showed near-random texture with weak (001) texture and a lower frequency of Sigma 3 grain boundaries compared to other types of grain boundaries. This reduction was found to be 15-22% from the CdTe to the CST layer.
3D electron backscatter diffraction (3D EBSD) was carried out using a Xe-PFIB on CdTe thin film solar cells, with a graded CdSeTe (CST) layer. Devices with different ranges of CST and CdTe thickness were investigated. Grain size, texture, coincident site lattice (CSL) boundaries through the film thickness were revealed by 3D EBSD and the elemental composition of the layers was studied using energy dispersive x-ray spectroscopy (EDS). Results show a reduction of (111) texture intensity and grain size when transitioning from CdTe to the graded (CST) layer. The CST has near randomised texture with weak (001) texture. Analysis of CSL boundaries showed that the CST layer in all devices has a lower frequency of Sigma 3 grain boundaries relative to other types of grain boundaries with a reduction of 15-22% from the CdTe to the CST layer.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available